MRF8P20165WHSR3【PDF 11/16 页】FET RF LDMOS 28V 550MA NI780S4

您好，
买卖IC网欢迎您。
请登录
免费注册

7页 8页 9页 10页 [11页]12页 13页 14页 15页

4

RF Device Data

Freescale Semiconductor

MRF8P20165WHR3 MRF8P20165WHSR3

Figure 2. MRF8P20165WHR3(WHSR3) Production Test

Circuit Component Layout

MRF8P20165W

Rev. 1

C8

VGGA

CUT OUT AREA

VGGB

VDDB

VDDA

C10

R2

C6

Z1

R1

C3

C4

C2

C1

C11

C9

R3

C7

C19

C23

C25

C24

C29

C28

C26

C27

C16

P

C13

C12

C15

C

C18

C22

C14

Note 1: Component numbers C5, C17, C20 and C21 are not used.

Note 2: VDDA

and VDDB

must be tied together and powered by a single DC power supply.

C30

Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values

Part

Description

Part Number

Manufacturer

C1, C2, C6, C7, C12, C13

15 pF Chip Capacitors

ATC600F150JT250XT

ATC

C3, C4

1.8 pF Chip Capacitors

ATC600F1R8BT250XT

ATC

C8, C9, C24, C25

10

μF, 50 V Chip Capacitors

GRM55DR61H106KA88L

Murata

C10, C11

22

μF, 35 V Tantalum Capacitors

T491X226K035AT

Kemet

C14

0.3 pF Chip Capacitor

ATC600F0R3BT250XT

ATC

C15, C16

1.0 pF Chip Capacitors

ATC600F1R0BT250XT

ATC

C18, C19

2.0 pF Chip Capacitors

ATC600F2R0BT250XT

ATC

C22, C23

18 pF Chip Capacitors

ATC600F180JT250XT

ATC

C26, C27

0.1 pF Chip Capacitors

ATC600F0R1BT250XT

ATC

C28, C29

220

μF, 50 V Electrolytic Capacitors

227CKS050M

Illinois Capacitor

C30

0.8 pF Chip Capacitor

ATC600F0R8BT250XT

ATC

R1

50

?, 4 W Chip Resistor

CW12010T0050GBK

ATC

R2, R3

2.37

?, 1/4 W Chip Resistors

CRCW12062R37FNEA

Vishay

Z1

1750 MHz Band 90°, 3 dB Hybrid Coupler

GSC351--HYB1900

Soshin

PCB

0.020″,

εr

=3.5

RO4350B

Rogers

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

MRF8P23080HSR3 FET RF N-CH 2.3GHZ 28V NI780S-4

MRF8P9040GNR1 IC MOSFET RF N-CHAN TO-270

MRF8P9300HSR6 FET RF N-CH 960MHZ 70V NI-1230HS

MRF8S18120HR5 MOSFET RF N-CH 120W NI-780

MRF8S18260HSR6 MOSFET RF N-CH 260W NI1230S-8

MRF8S19140HSR3 FET RF N-CH 1960MHZ 28V NI780HS

MRF8S19260HSR6 FET RF N-CH 1.9GHZ 30V NI1230S-8

MRF8S21120HSR3 FET RF N-CH 2.1GHZ 28V NI780HS

相关代理商/技术参数

MRF8P20165WHSR5 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 165W NI780S-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23080HR3 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23080HR5 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23080HSR3 功能描述:射频MOSFET电源晶体管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23080HSR5 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23160WHR3 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23160WHR5 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray

MRF8P23160WHSR3 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780S-4 RoHS:否制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray